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NVMFS6H824NT1G

Part No NVMFS6H824NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 19A/103A 5DFN / N-Channel 80 V 19A (Ta), 103A (Tc) 3.8W (Ta), 115W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 19A, 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V
Power Dissipation (Max) 3.8W, 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Case / Package 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NVMFS6H824NT1GOSDKR,NVMFS6H824NT1GOSTR,NVMFS6H824NT1GOSCT
Standard Package 1,500
Win Source Part Number 1324085-NVMFS6H824NT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H824NT1G CAD Model

Description

ON Semiconductor NVMFS6H824NT1G Power MOSFET

The NVMFS6H824NT1G is a high-performance, N-channel Power MOSFET designed by ON Semiconductor, a company renowned for its innovative and energy-efficient solutions in the power semiconductor space. This MOSFET is part of ON Semiconductor's comprehensive portfolio of power management devices, aimed at providing efficient power conversion with minimal losses.

Constructed with advanced silicon technology, the NVMFS6H824NT1G is tailored for a variety of applications, including automotive systems, power supplies, and high-efficiency DC-DC converters. Its design ensures that it can handle high current and power levels while maintaining a low on-resistance, which is essential for reducing power losses and improving overall efficiency in electronic systems.

Key features of the NVMFS6H824NT1G include:

  • Low R<sub>DS(on): This MOSFET boasts an exceptionally low drain-to-source on-resistance, which translates into reduced conduction losses and enhances the overall efficiency of the application it is used in.
  • High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for high-power applications that require robust current handling capabilities.
  • High Temperature Performance: With an ability to operate effectively at high temperatures, the NVMFS6H824NT1G ensures reliability and longevity in harsh environments, a critical feature for automotive and industrial applications.
  • Low Gate Charge (Q<sub>G): The device has a low gate charge, which facilitates faster switching speeds and reduces switching losses, contributing to the efficiency of high-frequency power conversion systems.

The NVMFS6H824NT1G comes in a compact, surface-mount package which is optimized for minimal footprint and ease of integration into various circuit designs. Its robust package design also offers enhanced thermal performance, ensuring that the device can handle the thermal stresses associated with high-power operations.

Whether for power regulation in automotive electronics, power supply units, or for improving the efficiency of renewable energy systems, the NVMFS6H824NT1G from ON Semiconductor is an excellent choice for engineers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2653 $50.6120
85+ $1.1853 $100.7505
135+ $1.1452 $154.6020
190+ $1.0651 $202.3690
245+ $1.0251 $251.1495
305+ $0.9851 $300.4555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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