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NVMFS6H836NWFT1G

Part No NVMFS6H836NWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 15A/74A 5DFN / N-Channel 80 V 15A (Ta), 74A (Tc) 3.7W (Ta), 89W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 89W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,500 pcs
Win Source Part Number 1383097-NVMFS6H836NWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS6H836NWFT1G CAD Model

Description

ON Semiconductor NVMFS6H836NWFT1G Product Overview

The NVMFS6H836NWFT1G is a cutting-edge power MOSFET from ON Semiconductor, designed to cater to a wide range of applications that demand high efficiency, reliability, and performance. The device is housed in a compact 5x6 mm² footprint, making it suitable for space-constrained applications while still delivering robust power management capabilities.

This MOSFET is part of ON Semiconductor's comprehensive portfolio of power solutions, which are engineered to meet the stringent requirements of modern electronic systems. With its low on-resistance and high current handling capabilities, the NVMFS6H836NWFT1G is an excellent choice for power conversion and management tasks in computing, automotive, consumer, and industrial applications.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion circuits.
  • High Current Capability: Designed to handle high currents, this MOSFET is capable of supporting demanding power requirements, making it ideal for high-performance applications.
  • Single N-Channel: As a single N-Channel MOSFET, it offers ease of integration and simplicity in circuit design, while providing the necessary performance for switching applications.
  • PowerTrench® Technology: The NVMFS6H836NWFT1G incorporates ON Semiconductor's proprietary PowerTrench technology, which enhances the device's switching speed and reduces switching losses.
  • High-Temperature Operation: Capable of operating at high temperatures, this MOSFET ensures reliable performance even under thermal stress.

Applications

The NVMFS6H836NWFT1G is versatile enough to be used in various applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

ON Semiconductor's commitment to quality and performance is evident in the NVMFS6H836NWFT1G MOSFET, making it a reliable and efficient solution for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0140 $60.8400
140+ $0.8321 $116.4940
215+ $0.8061 $173.3115
300+ $0.7801 $234.0300
385+ $0.7540 $290.2900
515+ $0.6761 $348.1915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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