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Same model may have multiple batches, images only for reference.
BC338-40 B1G Real Image
Same model may have multiple batches, images only for reference.

BC338-40 B1G

Part No BC338-40 B1G
Manufacturer Taiwan Semiconductor
Catalog Transistors (BJT) - Single
Description TRANSISTOR, NPN, 25V, 0.8A, 250A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Status Active
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 625mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92
Win Source Part Number 1022344-BC338-40 B1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC338-40 B1G CAD Model

Description

The BC338-40 B1G is a discrete semiconductor product manufactured by Taiwan Semiconductor.

  • Transistor Type: NPN
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Current Collector: 800mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 25V
  • Maximum Power Dissipation: 625mW
  • Collector Cut-off Current: 100nA (ICBO)
  • Case/Package: TO-92
  • Maximum Vce(sat): 700mV @ 50mA, 500mA

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