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Same model may have multiple batches, images only for reference.
64-2096PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

64-2096PBF

Part No 64-2096PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 160A D2PAK-7
Datasheet
64-2096PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 7580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 1006671-64-2096PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 64-2096PBF CAD Model

Description

The Infineon Technologies 1006671-64-2096PBF is an N-channel MOSFET, packaged in D2PAK (7-Lead).

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C (Tc): 160A @ 25°C
  • Gate-Source Threshold Voltage @ 250μA: 4V @ 250μA
  • Gate Charge (Max) @ 10V: 260nC @ 10V
  • Input Capacitance (Max) @ 25V: 7580pF @ 25V
  • Rds On (Max) @ Id,Vgs: 3.8 mOhm @ 110A, 10V
  • Power Dissipation (Max) (Tc): 300W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)

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