The ON Semiconductor NVMYS5D3N04CTWG is a cutting-edge power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry. With its advanced features and robust design, the NVMYS5D3N04CTWG is an ideal choice for power management tasks in both commercial and industrial settings.

Key Features

• Low R<sub>DS(on): The device boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
• High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for high-power applications.
• High Temperature Performance: Engineered to operate reliably at high temperatures, this MOSFET maintains performance even under thermal stress.
• Fast Switching Speed: The fast switching capabilities of the NVMYS5D3N04CTWG ensure minimal switching losses and are ideal for high-frequency applications.
• Robust Package: Encased in a TO-247 package, it provides excellent thermal and mechanical characteristics, ensuring durability and long-term reliability.

Applications

The NVMYS5D3N04CTWG is versatile and can be used in various applications, including:

• DC/DC Converters
• Power Supplies for Servers and Telecom Systems
• Motor Drives
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Automotive Applications

Product Specifications

Parameter Value V<sub>DS (Drain-Source Voltage) 40V R<sub>DS(on) (at V<sub>GS = 10V) 5.3 mΩ I<sub>D (Continuous Drain Current) 80A Package TO-247

With its high-performance characteristics and robust packaging, the ON Semiconductor NVMYS5D3N04CTWG stands out as a superior choice for designers looking to optimize their power management systems.