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NVTR01P02LT1G

Part No NVTR01P02LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.3A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 3.1nC @ 4V
Max Input Capacitance 225pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 750mA, 4.5V
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084162-NVTR01P02LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVTR01P02LT1G CAD Model

Description

Introducing the NVTR01P02LT1G P-Channel MOSFET from ON Semiconductor

The NVTR01P02LT1G is a high-performance P-Channel MOSFET brought to you by ON Semiconductor, a leader in the semiconductor industry. This MOSFET is designed to deliver efficient power management and control in a wide array of electronic applications. Its compact SOT-23 package makes it suitable for space-constrained applications while providing robust thermal performance and reliability.

Key Features and Benefits

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures low-voltage operation, making it ideal for portable and battery-powered applications where power efficiency is critical.
  • High Current Capability: With a continuous drain current of -1.2 A, the NVTR01P02LT1G can handle significant current, which is essential for driving loads in various circuits.
  • Low On-Resistance: A low R<sub>DS(on) minimizes on-state losses, which improves overall efficiency and reduces power dissipation in the circuit.
  • ESD Protection: The device includes built-in ESD protection, safeguarding the MOSFET from electrostatic discharges during handling and operation, thus enhancing its durability and lifespan.
  • Pb-Free and RoHS Compliant: ON Semiconductor is committed to environmental sustainability, and the NVTR01P02LT1G is both lead-free and RoHS compliant, making it a responsible choice for eco-friendly electronics manufacturing.

Applications

The NVTR01P02LT1G is versatile and can be used in a variety of applications. It is particularly well-suited for:

  • Load/Power Switching
  • Battery Management Systems
  • Power Management for Portable Devices
  • DC/DC Converters
  • Motor Control Circuits

Reliability and Performance

ON Semiconductor ensures that each NVTR01P02LT1G MOSFET meets the highest quality and performance standards. Customers can rely on this component to offer consistent performance and to withstand the rigors of everyday use in commercial and industrial environments.

Whether you are designing power supplies, motor controllers, or looking to improve the power efficiency of your portable devices, the NVTR01P02LT1G from ON Semiconductor is an excellent choice that combines energy efficiency, durability, and high performance in a small package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5961 $50.6685
205+ $0.4891 $100.2655
320+ $0.4738 $151.6160
440+ $0.4586 $201.7840
565+ $0.4433 $250.4645
755+ $0.3974 $300.0370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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