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SBC847BDW1T1G

Part No SBC847BDW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number SBC847
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 663853-SBC847BDW1T1G
Ultra Librarian 3D Model Ultra Librarian SBC847BDW1T1G CAD Model

Description

ON Semiconductor SBC847BDW1T1G - Dual NPN Bipolar Transistor

The ON Semiconductor SBC847BDW1T1G is a robust dual NPN bipolar transistor designed to deliver high performance in a compact SOT-363 package. This versatile component is commonly utilized in a wide range of electronic applications, including signal processing, amplification, and switching tasks. Its dual transistor configuration makes it an ideal choice for space-constrained designs where efficiency and reliability are of paramount importance.

Key Features

  • Transistor Type: Dual NPN - The SBC847BDW1T1G houses two NPN transistors within a single package, allowing for density optimization in circuit designs.
  • Voltage Ratings: It boasts a collector-emitter voltage (Vceo) of 50V and a collector-base voltage (Vcbo) of 80V, providing a wide operating range for various applications.
  • Current Handling: Each transistor can handle a continuous collector current (Ic) of up to 100mA, making it suitable for moderate power applications.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 100MHz, this component is capable of high-speed operation, which is essential for high-frequency signal amplification.
  • Low Noise Figure: It has a low noise figure, making it an excellent choice for audio amplifiers and other applications where signal integrity is critical.
  • Power Dissipation: The device has a total device power dissipation (Pd) of 200mW, allowing for sufficient power handling within its small form factor.
  • Operating Temperature Range: The SBC847BDW1T1G can operate within a temperature range of -55°C to +150°C, ensuring reliability across diverse environmental conditions.

Applications

This dual NPN bipolar transistor is designed to be a versatile component in various electronic circuits. It is particularly well-suited for:

  • General-purpose amplification
  • Audio amplifiers
  • Signal processing
  • Switching applications
  • Driver stages in hi-fi amplifiers and television circuits

With its compact SOT-363 package, the SBC847BDW1T1G from ON Semiconductor is an excellent choice for designers looking to optimize board space without compromising on performance. Its combination of high current handling, voltage ratings, and power dissipation makes it a reliable and efficient solution for a wide array of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
965+ $0.0519 $50.0835
2,060+ $0.0486 $100.1160
3,195+ $0.0470 $150.1650
4,580+ $0.0437 $200.1460
5,940+ $0.0421 $250.0740
7,430+ $0.0404 $300.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 965 pcs
Order Increment : 1 pcs
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