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SBRV660VCTT4G

Part No SBRV660VCTT4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Arrays
Mfr onsemi
Series SWITCHMODE™
Package Tape & Reel (TR)
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified (Io) (per Diode) 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number SBRV660
Other Names 2156-SBRV660VCTT4G-OS,SBR660CTT4G,ONSONSSBRV660VCTT4G,SBR660CTT4G
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282997-SBRV660VCTT4G
Ultra Librarian 3D Model Ultra Librarian SBRV660VCTT4G CAD Model

Description

The SBRV660VCTT4G is a state-of-the-art power rectifier product from ON Semiconductor, designed to offer superior performance in a variety of applications. This component is part of the Super Barrier Rectifier (SBR®) series, which is renowned for its high efficiency and reliability. The SBRV660VCTT4G is specifically engineered to meet the rigorous demands of high-frequency power systems.

Key Features

  • High Surge Capability: This rectifier is capable of withstanding high surge currents, making it ideal for applications that experience transient over-voltage conditions.
  • Low Forward Voltage Drop: The low forward voltage drop feature ensures high efficiency, which is critical for reducing power loss and improving overall system performance.
  • High Temperature Operation: With an operating junction temperature range of -55°C to +150°C, the SBRV660VCTT4G is suitable for use in harsh environments.
  • RoHS Compliant: This product is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and safe for use in electronic equipment.

Applications

The SBRV660VCTT4G is versatile and can be utilized in a wide array of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Free-Wheeling Diodes
  • Reverse Battery Protection
  • Automotive Applications
  • Telecommunications Infrastructure

Technical Specifications

Parameter Value Package TO-220-3 Diode Configuration Common Cathode Maximum Average Forward Current 6 A Peak Reverse Voltage 60 V Operating Junction Temperature Range -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The SBRV660VCTT4G is manufactured with the highest standards and has undergone rigorous testing to ensure its performance and reliability. Customers can trust ON Semiconductor for their power rectifier needs, as the company's products are backed by extensive industry experience and technical support.

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