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SGP40N60UFTU

Part No SGP40N60UFTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 40A 160W TO220  /  IGBT 600 V 40 A 160 W Through Hole TO-220-3
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Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 20A
Power - Max 160 W
Switching Energy 160µJ (on), 200µJ (off)
Input Type Standard
Gate Charge 97 nC
Td (on/off) @ 25°C 15ns/65ns
Test Condition 300V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number SGP40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1092720-SGP40N60UFTU
Ultra Librarian 3D Model Ultra Librarian SGP40N60UFTU CAD Model

Description

The SGP40N60UFTU is a high-performance, fast IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor. This IGBT is engineered for efficiency and speed, making it an ideal choice for a range of power electronic applications such as inverters, converters, and motor drives.

Key Features

  • High Current Capability: The SGP40N60UFTU supports a continuous collector current of up to 40A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 600V, this device can handle the demands of various electrical circuits without compromise.
  • Fast Switching Speed: The device boasts a low total gate charge (Qg) and reduced tail current, leading to faster switching speeds and improved system efficiency.
  • Low On-State Voltage Drop (Vce(sat)): The IGBT offers a low saturation voltage, which reduces conduction losses and enhances overall performance.
  • Co-Packaged Free Wheeling Diode: The inclusion of a robust and fast soft-recovery anti-parallel diode ensures efficient freewheeling capabilities, further enhancing the performance of this IGBT module.

Applications

The SGP40N60UFTU is versatile and can be used in a wide array of applications that require high efficiency and power density. Some of the typical applications include:

  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • DC/AC inverters for solar energy systems
  • Induction heating and welding equipment
  • Electric vehicle (EV) chargers
  • High-frequency switching power supplies

Benefits

The SGP40N60UFTU from ON Semiconductor provides numerous benefits to designers and engineers. Its high efficiency and fast switching capabilities contribute to reducing energy losses and improving thermal management in power electronic systems. Additionally, the device's robust design and high reliability ensure long-term performance even in demanding environments.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the SGP40N60UFTU is no exception. It is produced using state-of-the-art manufacturing processes and subjected to rigorous testing to ensure it meets the highest standards of performance and reliability.

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