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SMMBT2907ALT1G

Part No SMMBT2907ALT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description General Purpose Transistors PNP Silicon | TRANS PNP 60V 0.6A SOT23
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 1.6V at 50mA, 500mA
Current - Collector Cutoff (Maximum) 10nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 734523-SMMBT2907ALT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SMMBT2907ALT1G CAD Model

Description

ON Semiconductor SMMBT2907ALT1G - PNP Bipolar Transistor

The SMMBT2907ALT1G from ON Semiconductor is a high-quality PNP bipolar (BJT) transistor designed for general-purpose amplifier and switching applications. This versatile component is a staple in electronic circuits due to its reliability and performance characteristics. It boasts a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -60V, and a collector current (IC) of -600mA, making it suitable for a wide range of medium-power applications.

Encased in a compact SOT-23 surface-mount package, the SMMBT2907ALT1G is optimized for space-constrained applications. This small form factor does not compromise its thermal and electrical performance, which is a testament to ON Semiconductor's commitment to delivering high-quality components in versatile packages. The device also features a collector-emitter saturation voltage (VCE(sat)) of -0.4V, ensuring low voltage drop during operation and increased efficiency.

The SMMBT2907ALT1G provides excellent current gain (hFE) characteristics, with a minimum hFE of 100 at -10mA of collector current, ensuring consistent amplification across various loads. This makes it an ideal choice for designers looking for a reliable transistor that can maintain stable operation throughout its use.

ON Semiconductor's commitment to environmental sustainability is evident in the SMMBT2907ALT1G, as it is a Pb-free, Halide free, and RoHS compliant component. This ensures that the product is not only safe for the environment but also meets the strict regulations for electronic components in many markets.

Whether you are designing power management systems, consumer electronics, or industrial equipment, the SMMBT2907ALT1G offers the performance and reliability needed for efficient circuit operation. Its robustness and versatility make it a preferred choice for engineers and designers seeking a dependable PNP transistor for their electronic designs.

Overall, the SMMBT2907ALT1G is a testament to ON Semiconductor's dedication to providing high-performance components that meet the evolving needs of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,030+ $0.0487 $50.1610
2,500+ $0.0400 $100.0000
3,870+ $0.0388 $150.1560
5,335+ $0.0375 $200.0625
6,890+ $0.0363 $250.1070
9,235+ $0.0325 $300.1375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 137,775 pieces
MOQ: 1030 pcs
Order Increment : 1 pcs
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