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SMUN5311DW1T3G

Part No SMUN5311DW1T3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA - 187mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Case / Package SC-88/SC70-6/SOT-363
Family Name SMUN5311
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number SMUN5311DW1T3GOSDKR, SMUN5311DW1T3GOSCT, SMUN5311DW1T3GOSTR, SMUN5311DW1T3G-ND
Quantity per package 10000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 896304-SMUN5311DW1T3G
Ultra Librarian 3D Model Ultra Librarian SMUN5311DW1T3G CAD Model

Description

ON Semiconductor SMUN5311DW1T3G Overview

The SMUN5311DW1T3G from ON Semiconductor is a high-performance, dual NPN and PNP bipolar transistor housed in a compact SOT-363 package. This product is designed for general-purpose amplifier and switching applications, offering a unique combination of features that enhance its versatility and reliability for a wide range of electronic circuits.

Key Features and Benefits

  • Dual Bipolar Transistor Configuration: The device integrates both an NPN and a PNP transistor, which allows for design flexibility and can save board space by reducing the number of components required.
  • High Current Gain Bandwidth Product: With a high fT (transition frequency), the SMUN5311DW1T3G is suitable for amplification of high-frequency signals, making it an excellent choice for audio and signal processing applications.
  • Low Collector-Emitter Saturation Voltage: This feature ensures lower power dissipation and improved efficiency, which is critical for battery-powered devices.
  • Complementary Pair: The combination of NPN and PNP transistors provides a complementary pair that is often used in push-pull amplifier configurations, offering better efficiency and linearity.
  • SOT-363 Package: The small surface-mount package is ideal for space-constrained applications and allows for high-density PCB layouts.

Applications

  • Signal processing
  • Audio amplifiers
  • Power management
  • Switching circuits
  • Driver stages in amplifiers

Product Specifications

The SMUN5311DW1T3G features a collector-emitter voltage (VCEO) of 50V for both the NPN and PNP transistors, with a collector current (IC) of up to 100mA. The device also boasts a collector-base voltage (VCBO) of 60V for the NPN and 50V for the PNP, and an emitter-base voltage (VEBO) of 5V. The maximum DC current gain (hFE) is specified from 100 to 600, ensuring consistent performance across various operating conditions.

With its robust performance characteristics and compact form factor, the SMUN5311DW1T3G from ON Semiconductor is an excellent choice for designers looking to optimize their circuit designs with a reliable, versatile transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,430+ $0.0404 $57.7720
3,450+ $0.0335 $115.5750
5,360+ $0.0323 $173.1280
7,410+ $0.0312 $231.1920
9,620+ $0.0300 $288.6000
12,500+ $0.0277 $346.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 1430 pcs
Order Increment : 1 pcs
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