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STDV5804NT4G

Part No STDV5804NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 69A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083869-STDV5804NT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STDV5804NT4G CAD Model

Description

ON Semiconductor STDV5804NT4G Overview

The STDV5804NT4G is a high-performance, N-channel Trench MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is engineered for optimal efficiency and reliability, making it an ideal choice for a wide range of applications, including power management, switching circuits, and high-speed DC-DC converters.

Key Features

  • Low On-Resistance: The STDV5804NT4G boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Current Capability: With its ability to handle high currents, this MOSFET can easily manage demanding power requirements.
  • Low Gate Charge: The low gate charge (Q<sub>G) characteristic of this device ensures faster switching performance, which is critical for high-speed applications.
  • High Threshold Voltage: The device maintains a high threshold voltage (V<sub>TH), providing a stable operation and reducing the risk of unintentional turn-on.
  • Robust Thermal Performance: The STDV5804NT4G is designed to operate effectively over a wide temperature range, ensuring reliability even under thermal stress.

Applications

The versatility of the STDV5804NT4G allows it to be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • Switching regulators
  • Load switch applications

Package and Environmental Compliance

The STDV5804NT4G comes in a compact DPAK (TO-252) package, which is not only space-efficient but also offers excellent power dissipation characteristics. Furthermore, ON Semiconductor is committed to environmental sustainability, and this product complies with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from harmful substances and suitable for eco-friendly initiatives.

In conclusion, the STDV5804NT4G from ON Semiconductor is a superior choice for designers seeking a robust, efficient, and reliable N-channel MOSFET for their power management solutions. Its combination of low on-resistance, high current capacity, and fast switching speeds make it an essential component in modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,800 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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