The TIP2955G is a high-performance PNP bipolar power transistor designed and manufactured by ON Semiconductor. This robust semiconductor device is engineered to handle high power dissipation and is commonly utilized in a variety of power amplification and switching applications.

Key Features

• Transistor Type: PNP - This allows for a smooth integration into negative ground circuitry, which is typical in many electronic systems.
• Collector-Emitter Voltage (VCEO): 60V - The maximum voltage between the collector and emitter terminals can safely sustain, making it suitable for mid-range voltage applications.
• Collector Current (IC): 15A - This high current rating indicates the transistor's capability to handle significant power for driving motors, solenoids, and other inductive loads.
• Total Power Dissipation (Ptot): 90W at 25°C - The TIP2955G can dissipate a considerable amount of power as heat without damage, ensuring reliable operation in high-power scenarios.
• DC Current Gain (hFE): 20 to 70 when IC = 4A - This gain factor represents the transistor's efficiency in amplifying the input signal at a specified collector current.
• Operating Temperature Range: -65°C to +150°C - A broad temperature range guarantees stable performance across various environmental conditions.

Applications

The TIP2955G is versatile and can be used in diverse applications, including:

• Linear amplifiers
• Switching regulators
• Motor controls
• Power inverters
• Relay drivers

Package and Quality

The TIP2955G comes in a TO-247 package, which is known for its ability to handle high thermal and electrical loads. This package is also conducive to efficient heat sinking, which is critical for maintaining the longevity and reliability of the device. ON Semiconductor is committed to high standards of quality, and the TIP2955G is no exception, ensuring that each component meets rigorous industry specifications for performance and durability.