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2SD12660P

Part No 2SD12660P
Manufacturer Panasonic
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 3A TO-220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1.2V @ 375mA, 3A
Collector Cut-off Current(Max) 300μA
Typical Gain (hFE) (Min) 120 @ 1A, 4V
Maximum Power Dissipation 2W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-A1
Win Source Part Number 1004524-2SD12660P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD12660P CAD Model

Description

The Panasonic Electronic Components 2SD12660P is an NPN transistor suitable for discrete semiconductor applications.

  • Package: TO-220F-A1
  • Mounting: Through-hole
  • Maximum Current Collector: 3A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
  • Maximum Vce (sat): 1.2V @ 375mA and 3A
  • Collector Cut-Off Current (max): 300μA
  • Typical Gain (hFE) (min): 120 @ 1A and 4V
  • Maximum Power Dissipation: 2W
  • Temperature Range: 150°C (TJ)
  • Supply and Demand Status: balanced

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