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Same model may have multiple batches, images only for reference.
UNR52ALG0L Real Image
Same model may have multiple batches, images only for reference.

UNR52ALG0L

Part No UNR52ALG0L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 150MW SMINI3  /  Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 150 MHz 150 mW Surface Mount SMini3-F2
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 80 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 150 MHz
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SC-85
Supplier Device Package SMini3-F2
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names UNR52ALG0LDKR,UNR52ALG0LCT,UNR52ALG0LTR
Standard Package 3,000
Win Source Part Number 979803-UNR52ALG0L
Ultra Librarian 3D Model Ultra Librarian UNR52ALG0L CAD Model

Description

The UNR52ALG0L is an NPN Pre-Biased Bipolar Transistor suitable for use in discrete semiconductor products.

  • Packaging: Tape and Reel
  • Standard Package: 3000
  • Maximum Power: 150mW
  • Voltage Collector Emitter Breakdown: 50V
  • Current Collector (Ic) Maximum: 80mA
  • Vce Saturation: 250mV @ 300μA, 10mA
  • Current Collector Cutoff: 500nA
  • DC Current Gain (hFE): 20 @ 5mA, 10V
  • Frequency Transition: 150MHz
  • Mounting Format: SMD (SMT)
  • Package/Case: SC-85
  • Supplier Device Package: SMini3-F2
  • Manufacturer: Panasonic Electronic Components
  • Product Status: Obsolete

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