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Same model may have multiple batches, images only for reference.
UNR9113J0L Panasonic
Same model may have multiple batches, images only for reference.

UNR9113J0L

Part No UNR9113J0L
Manufacturer Panasonic
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 125MW SSMINI3
Datasheet
UNR9113J0L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Panasonic Electronic Components
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 150MHz
Maximum Power Dissipation 125mW
Mounting SMD (SMT)
Case / Package SSMini3-F1
Win Source Part Number 115154-UNR9113J0L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UNR9113J0L CAD Model

Description

The Panasonic Electronic Components UNR9113J0L is a PNP pre-biased transistor that is part of the SSMini3-F1 series.

  • Operating Temperature: It is designed to operate in a temperature range of -40°C to 85°C and has a maximum current collector of 100mA.
  • Collector-Emitter Breakdown Voltage: This transistor has a collector-emitter breakdown voltage of 50V
  • Maximum Power Dissipation: 125mW
  • Typical Gain (hFE): 80 @ 5mA and 10V.
  • Compliance: This transistor is ECCN EAR99 compliant and has an HTSUS of 8541.29.9000.
  • Lifecycle Status: It is obsolete (EOL) and has a balanced supply and demand status.

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