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Same model may have multiple batches, images only for reference.
UNR9115J0L Panasonic
Same model may have multiple batches, images only for reference.

UNR9115J0L

Part No UNR9115J0L
Manufacturer Panasonic
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 125MW SSMINI3  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 125 mW Surface Mount SSMini3-F1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Panasonic Electronic Components
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 80 MHz
Power - Max 125 mW
Mounting SMD (SMT)
Package / Case SC-89, SOT-490
Supplier Device Package SSMini3-F1
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names UN9115J-(TX),UNR9115J0LCT,UNR9115J0LDKR,UN9115JCT-ND,UN9115JTR,UN9115JCT,UN9115J-TX,UNR9115J0LTR-NDR,UNR9115J0LDKR-NDR,UN9115JTR-ND,UNR9115J0LTR,UNR9115J0LCT-NDR
Standard Package 3,000
Win Source Part Number 1102379-UNR9115J0L
Ultra Librarian 3D Model Ultra Librarian UNR9115J0L CAD Model

Description

The Panasonic Electronic Components UNR9115J0L is a pre-biased PNP transistor that comes in tape and reel packaging with 3,000 units.

  • Maximum power dissipation: 125mW
  • Collector-emitter breakdown voltage: 50V
  • DC current gain (hFE): 160 @ 5mA and 10V, making it suitable for use in low-power amplification circuits.
  • Mounting: surface mountable
  • Package: SC-89, SOT-490 package
  • Widely used in: various electronic devices such as audio amplifiers, power supplies, and voltage regulators.

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