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Same model may have multiple batches, images only for reference.
PJP18N20_T0_00001 Panjit
Same model may have multiple batches, images only for reference.

PJP18N20_T0_00001

Part No PJP18N20_T0_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description TO-220AB, MOSFET / N-Channel 200 V 18A (Tc) 89W (Tc) Through Hole TO-220AB
Datasheet
PJP18N20_T0_00001 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1017 pF @ 25 V
Power Dissipation (Max) 89W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJP18N20_T0_00001
Standard Package 50
Win Source Part Number 1153139-PJP18N20_T0_00001
Ultra Librarian 3D Model Ultra Librarian PJP18N20_T0_00001 CAD Model

Description

The PJP18N20_T0_00001 is a MOSFET (Metal Oxide) transistor that is ideal for use in various electronic devices.

  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id): 18A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
  • Vgs (Max): ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Panjit International Inc.

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