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Same model may have multiple batches, images only for reference.
PJS6415AE_S1_00001 Real Image
Same model may have multiple batches, images only for reference.

PJS6415AE_S1_00001

Part No PJS6415AE_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 20V P-CHANNEL ENHANCEMENT MODE M / P-Channel 20 V 4.9A (Ta) 2W (Ta) Surface Mount SOT-23-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Panjit International Inc.
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 602 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-6
Package / Case SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJS6415AE_S1_00001TR,3757-PJS6415AE_S1_00001CT,3757-PJS6415AE_S1_00001DKR
Standard Package 3,000
Win Source Part Number 1085313-PJS6415AE_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6415AE_S1_00001 CAD Model

Description

The Panjit PJS6415AE_S1_00001 is a P-channel MOSFET transistor that has a drain to source voltage of 20V and a current continuous drain of 4.9A @ 25°C.

  • Drain to Source Voltage: 20V
  • Current Continuous Drain: 4.9A @ 25°C
  • Maximum On-Resistance: 60mΩ
  • Gate Charge: 6.9nC @ 4.5V
  • Maximum Power Dissipation: 2W
  • Temperature Range: -55°C to 150°C
  • RoHS Compliant: Yes
  • MSL Level: Unlimited

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