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Same model may have multiple batches, images only for reference.
PJS6600_S1_00001 Real Image
Same model may have multiple batches, images only for reference.

PJS6600_S1_00001

Part No PJS6600_S1_00001
Manufacturer Panjit
Catalog Transistors - FETs, MOSFETs - RF
Description 30V COMPLEMENTARY ENHANCEMENT MO / Mosfet Array N and P-Channel Complementary 30V 1.6A (Ta), 1.1A (Ta) 1.25W (Ta) Surface Mount SOT-23-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Panjit International Inc.
Package Tape & Reel
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta), 1.1A (Ta)
Rds On (Max) @ Id, Vgs 200mOhm @ 1.6A, 4.5V, 370mOhm @ 1.1A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V, 1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 15V, 125pF @ 15V
Power - Max 1.25W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-23-6
Supplier Device Package SOT-23-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3757-PJS6600_S1_00001TR,3757-PJS6600_S1_00001DKR,3757-PJS6600_S1_00001CT
Standard Package 3,000
Win Source Part Number 1085314-PJS6600_S1_00001
Ultra Librarian 3D Model Ultra Librarian PJS6600_S1_00001 CAD Model

Description

The N and P-Channel Complementary FETs are a set of MOSFETs that are designed to work together in complementary pairs.

  • FET Type: Standard
  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 1.6A (Ta) and 1.1A (Ta) respectively
  • Maximum Rds on: 200mOhm @ 1.6A, 4.5V and 370mOhm @ 1.1A, 4.5V
  • Maximum Vgs(th): 1.3V @ 250μA
  • Maximum Power: 1.25W (Ta)
  • Package: SOT-23-6
  • Gate Charge (Qg): 1.5nC @ 4.5V, 1.6nC @ 4.5V
  • Input Capacitance (Ciss): 93pF @ 15V, 125pF @ 15V

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