The 965354-RM4N650IP is a N-Channel MOSFET (Metal Oxide) FET Type semiconductor component designed for use in discrete semiconductor products such as Transistors.

• FET Type: N-Channel MOSFET (Metal Oxide)
• Category: Discrete Semiconductor Products
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250μA
• Power Dissipation (Max): 46W (Tc)
• Mounting Type: Through Hole
• Package: TO-251-3 Stub Leads, IPak
• Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V
• Vgs (Max): ±30V
• Operating Temperature Range: -55°C to 150°C (TJ)
• Manufacturer: Rectron USA