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2SK1518-E

Part No 2SK1518-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 3050pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 053568-2SK1518-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK1518-E CAD Model

Description

Product Overview: 2SK1518-E

The 2SK1518-E is a variant of the 2SK1518, specifically manufactured to provide enhanced electrical performance and mechanical stability. This N-Channel MOSFET is tailored for sensitive and high-stakes applications where precision and power control are essential.

Features and Benefits

  • Greater Reliability: Improvements in the 2SK1518-E ensure enhanced reliability, meeting rigorous operational standards.
  • Optimized Thermal Performance: With superior thermal management, this MOSFET prevents overheating in high-power applications.
  • Improved Switching Efficiency: Designed for fast and efficient switching operations, crucial for time-sensitive technologies.
  • Sustained Voltage Capacity: Capable of handling high voltage applications, offering flexibility in design.

Applications

  • Precision Measurement Equipment
  • Telecommunication Systems
  • Industrial Control Systems
  • High-Performance Computing

Further Details

The 2SK1518-E is ideal for use in cutting-edge electronic systems where precision is key. Its engineering excellence allows it to be a dependable choice in industrial and commercial environments that demand undeviating performance and robustness.

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