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Same model may have multiple batches, images only for reference.
2SK2109-T1-AZ
Same model may have multiple batches, images only for reference.

2SK2109-T1-AZ

Part No 2SK2109-T1-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 2SK2109-T1-AZ - N-CHANNEL MOS FE  /  N-Channel 60 V 500mA (Ta) 2W (Ta) Surface Mount SC-62
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 111 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package SC-62
Package / Case TO-243AA
RoHS Status RoHS non-compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-2SK2109-T1-AZ
Standard Package 1
Win Source Part Number 1037667-2SK2109-T1-AZ
Ultra Librarian 3D Model Ultra Librarian 2SK2109-T1-AZ CAD Model

Description

The Renesas Electronics America 2SK2109-T1-AZ is a single N-channel MOSFET that has a drain-to-source voltage of 60V and a continuous drain current of 500mA.

  • Channel Type: N-channel
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 500mA
  • Features: Low on-resistance
  • RoHS Compliance: Non-compliant
  • Status: Obsolete
  • Popularity: Low

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