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2SK3140-E

Part No 2SK3140-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1037750-2SK3140-E
Ultra Librarian 3D Model Ultra Librarian 2SK3140-E CAD Model

Description

The 2SK3140-E is an N-channel MOSFET designed and manufactured by Renesas Electronics America. This MOSFET is specifically tailored for high-frequency applications, providing excellent performance characteristics for RF amplifiers, oscillators, and other high-speed circuits. Its robust design ensures reliable operation even under demanding conditions.

Applications:

  • RF Amplifiers
  • Oscillators
  • High-Speed Switching Circuits
  • Mixers
  • Voltage Regulators

Features:

  • N-Channel MOSFET
  • High Input Impedance
  • Low On-Resistance (RDS(on))
  • High-Frequency Operation
  • Surface Mount Package

Benefits:

  • Efficient Power Amplification: Optimized for RF amplifier applications, providing high gain and efficiency.
  • Reduced Power Loss: Low on-resistance minimizes power dissipation, improving overall system efficiency.
  • Stable Operation: Designed for high-frequency operation, ensuring stable performance in demanding circuits.
  • Compact Design: The surface mount package allows for efficient use of board space.
  • Reliable Performance: Renesas's rigorous manufacturing standards ensure a dependable and long-lasting component.

Technical Specifications:

The 2SK3140-E's key specifications include drain-source voltage (VDS), gate-source voltage (VGS), and drain current (ID). Consult the Renesas datasheet for the complete specifications, including power dissipation, operating temperature range, and package dimensions. The device's gate capacitance is optimized for high-frequency impedance matching. Proper thermal management is crucial to maintaining optimal performance; ensure adequate heat sinking if operating at higher power levels.

The device's low on-resistance (RDS(on)) reduces conduction losses, improving the efficiency of power amplifier designs. Its high input impedance simplifies the design of matching networks. The surface-mount package facilitates automated assembly, reducing manufacturing costs and improving overall reliability. Proper biasing is essential to achieve optimal performance. Consult the application notes provided by Renesas for guidance on biasing and circuit design.

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