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Same model may have multiple batches, images only for reference.
2SK3483-AZ Renesas Electronics America
Same model may have multiple batches, images only for reference.

2SK3483-AZ

Part No 2SK3483-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V MP-3/TO-251
Datasheet
2SK3483-AZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 49nC @ 10V
Max Input Capacitance 2300pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-251 (MP-3)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1004734-2SK3483-AZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3483-AZ CAD Model

Description

The Renesas Electronics America 2SK3483-AZ is a MOSFET electronic component that is designed for through-hole mounting.

  • Mounting: through-hole
  • Maximum Power Dissipation: 1W (Ta), 40W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Technology: N-Channel polarity
  • Drive Voltage: 4.5V, 10V
  • Maximum Rds On @ Id, Vgs: 52 mOhm @ 14A, 10V

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