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Same model may have multiple batches, images only for reference.
H5N2008P-E
Same model may have multiple batches, images only for reference.

H5N2008P-E

Part No H5N2008P-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 96 A
Drain to Source Voltage (Vdss) 200 V
RoHS Non-Compliant
Win Source Part Number 1004582-H5N2008P-E
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian H5N2008P-E CAD Model

Description

The Renesas Electronics America H5N2008P-E is a MOSFET transistor designed for RF applications.

  • Drain to Source Voltage: 200 V
  • Continuous Drain Current: 96 A
  • Popularity: Low popularity
  • Supply and Demand: Shortage supply and demand status
  • Market: in the open market.

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