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Same model may have multiple batches, images only for reference.
HAT2088R-EL-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

HAT2088R-EL-E

Part No HAT2088R-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 2A 8SOP
Datasheet
HAT2088R-EL-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 13nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 440 mOhm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1042355-HAT2088R-EL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2088R-EL-E CAD Model

Description

The Renesas Electronics America 1042355-HAT2088R-EL-E is an active component that is widely used in electronic devices.

  • Supply and Demand Status: Balance
  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 2A (Ta)
  • Maximum Rds On @ Id,Vgs: 440 mOhm @ 1A, 10V
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 450pF @ 25V

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