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Same model may have multiple batches, images only for reference.
HAT2160H-EL Real Image
Same model may have multiple batches, images only for reference.

HAT2160H-EL

Part No HAT2160H-EL
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 60A LFPAK
Datasheet
HAT2160H-EL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 54nC @ 4.5V
Max Input Capacitance 7750pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 067797-HAT2160H-EL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HAT2160H-EL CAD Model

Description

The HAT2160H-EL is an N-channel MOSFET from Renesas Electronics America. This device is designed for use in discrete semiconductor products, and comes in a LFPAK package.

  • Type: N-channel MOSFET
  • Package: LFPAK
  • Maximum Power Dissipation: 30W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 60A @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 54nC @ 4.5V
  • Maximum Input Capacitance: 7750pF @ 10V
  • Operating Temperature: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4548 $57.9124
32+ $3.6556 $116.9792
49+ $3.5412 $173.5188
68+ $3.4269 $233.0292
88+ $3.3125 $291.5000
117+ $2.9695 $347.4315
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Availability: 8,500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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