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HAT2173N-EL-E

Part No HAT2173N-EL-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 25A 8LFPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Rds On (Max) @ Id, Vgs 15.3mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4350 pF @ 10 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-LFPAK-iV
Package / Case 8-PowerSOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 596022-HAT2173N-EL-E
Ultra Librarian 3D Model Ultra Librarian HAT2173N-EL-E CAD Model

Description

The 596022-HAT2173N-EL-E is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 25A.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 25A
  • On-Resistance (Rds On): 15.3mOhm @ 12.5A and a gate-source voltage (Vgs) of 10V
  • Gate Charge (Qg): 61 nC @ a voltage of 10V
  • Input Capacitance (Ciss): 4350 pF @ a voltage of 10V
  • Power Dissipation: 30W
  • Mounting: Surface mount applications
  • Package: 8-PowerSOIC
  • Manufacturer: Renesas Electronics America
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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