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Same model may have multiple batches, images only for reference.
HS54095TZ-E
Same model may have multiple batches, images only for reference.

HS54095TZ-E

Part No HS54095TZ-E
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.2A TO-92
Datasheet
HS54095TZ-E Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 4.8nC @ 10V
Max Input Capacitance 66pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 16.5 Ohm @ 100mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 Short Body
Win Source Part Number 1043968-HS54095TZ-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HS54095TZ-E CAD Model

Description

The Renesas Electronics America HS54095TZ-E is an N-channel MOSFET that is designed for discrete semiconductor products. The device is manufactured by Renesas Electronics America and is available with the Win Source Part Number 1043968-HS54095TZ-E. The device is suitable for applications that require high voltage and current capabilities.

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