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Same model may have multiple batches, images only for reference.
NP32N055SDE-E1-AY
Same model may have multiple batches, images only for reference.

NP32N055SDE-E1-AY

Part No NP32N055SDE-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 55V 32A 3-Pin(2+Tab) TO-252 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252-3
Continuous Drain Current (ID) 32 A
Drain to Source Voltage (Vdss) 55 V
Fall Time 7.4 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 2 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 1.2 W
Min Operating Temperature -55 °C
Mount Surface Mount
Radiation Hardening No
Rds On Max 24 mΩ
Rise Time 8 ns
RoHS Compliant
Turn-Off Delay Time 40 ns
Turn-On Delay Time 14 ns
Win Source Part Number 1082611-NP32N055SDE-E1-AY
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Renesas Electronics America
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NP32N055SDE-E1-AY CAD Model

Description

The Renesas NP32N055SDE-E1-AY is an N-Channel MOSFET transistor with a maximum drain to source voltage of 55V and a continuous drain current (ID) of 32A.

  • Drain to Source Voltage: 55V
  • Continuous Drain Current (ID): 32A
  • Rds On Max: 24 mΩ
  • Input Capacitance: 2 nF
  • Package: TO-252-3
  • Mounting Type: SMD (SMT)

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