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NP80N055KLE-E1-AY

Part No NP80N055KLE-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 40A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083350-NP80N055KLE-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP80N055KLE-E1-AY CAD Model

Description

It has a balance supply and demand status.

  • Supply and Demand Status: Balance
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 1.8W (Ta), 120W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Package: TO-263
  • Maximum Gate-Source Voltage: ±20V
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0400 $57.7600
47+ $2.4936 $117.1992
72+ $2.4163 $173.9736
99+ $2.3377 $231.4323
128+ $2.2603 $289.3184
171+ $2.0270 $346.6170
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,320 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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