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Same model may have multiple batches, images only for reference.
NP82N055PUG-E1-AY Renesas Electronics America
Same model may have multiple batches, images only for reference.

NP82N055PUG-E1-AY

Part No NP82N055PUG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 82A TO-263
Datasheet
NP82N055PUG-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 9600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 41A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138990-NP82N055PUG-E1-AY
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NP82N055PUG-E1-AY CAD Model

Description

The Renesas Electronics America electronic component with Win Source Part Number 138990-NP82N055PUG-E1-AY is a MOSFET transistor with N-channel polarity.

  • Power Dissipation: 1.8W (Ta) and 143W (Tc)
  • Category: discrete semiconductor products
  • Status: active
  • Supply and Demand: limited

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Quantity Unit Price Ext. Price
14+ $4.3224 $60.5136
33+ $3.5467 $117.0411
51+ $3.4358 $175.2258
70+ $3.3249 $232.7430
90+ $3.2141 $289.2690
121+ $2.8816 $348.6736
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Availability: 10,300 pieces
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