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Same model may have multiple batches, images only for reference.
NP84N075KUE-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP84N075KUE-E1-AY

Part No NP84N075KUE-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 84A TO-263
Datasheet
NP84N075KUE-E1-AY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 8400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 42A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083354-NP84N075KUE-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP84N075KUE-E1-AY CAD Model

Description

The Renesas Electronics America MOSFET is an N-Channel power transistor that is ideal for use in various applications.

  • Maximum Power Dissipation: 1.8W (Ta) and 200W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 84A (Tc)
  • Maximum Rds On: 12.5 mOhm @ 42A, 10V
  • Package Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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