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RJH65T46DPQ-A0#T0 Real Image1 RJH65T46DPQ-A0#T0 Real Image2
Same model may have multiple batches, images only for reference.
RJH65T46DPQ-A0#T0 Real Image1 RJH65T46DPQ-A0#T0 Real Image2
RJH65T46DPQ-A0#T0 Real Image1 RJH65T46DPQ-A0#T0 Real Image2
Same model may have multiple batches, images only for reference.

RJH65T46DPQ-A0#T0

Part No RJH65T46DPQ-A0#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT TRENCH 650V 80A TO247A  /  IGBT Trench 650 V 80 A 340.9 W Through Hole TO-247A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 340.9 W
Switching Energy 450µJ (on), 550µJ (off)
Input Type Standard
Gate Charge 138 nC
Td (on/off) @ 25°C 45ns/170ns
Test Condition 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247A
Base Product Number RJH65T46
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -1161-RJH65T46DPQ-A0#T0
Standard Package 25
Win Source Part Number 1189506-RJH65T46DPQ-A0#T0
Ultra Librarian 3D Model Ultra Librarian RJH65T46DPQ-A0#T0 CAD Model

Description

The RJH65T46DPQ-A0#T0 is a single IGBT transistor that is designed for high power applications.

  • Power Rating: 340.9W
  • Collector-Emitter Breakdown Voltage: 650V
  • Current Rating: 80A
  • Vce(on): 2.4V @ 15V and 40A
  • IGBT Type: Trench IGBT
  • Package: TO-247-3
  • Operating Temperature: 175°C

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