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Same model may have multiple batches, images only for reference.
RN4911FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4911FE(TE85L,F)

Part No RN4911FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4911FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Style SMD/SMT
Package SOT-563, SOT-666
Manufacturer Device Package ES6
Win Source Part Number 104573-RN4911FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4911FE(TE85L,F) CAD Model

Description

The Toshiba RN4911FE(TE85L,F) is a bipolar transistor array that is pre-biased.

  • Family: transistors - bipolar (BJT) - arrays, pre-biased
  • Popularity: Medium
  • Frequency Transition: 200MHz
  • Current Collector (Ic) (Max): 100mA
  • Voltage Collector-Emitter Breakdown (Max): 50V

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