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RJK0330DPB-01#J0

Part No RJK0330DPB-01#J0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 45A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 4300pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 22.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 128208-RJK0330DPB-01#J0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK0330DPB-01#J0 CAD Model

Description

The Renesas Electronics America 128208-RJK0330DPB-01#J0 is an N-channel MOSFET that has a power dissipation of 55W (Tc).

  • Maximum Rds On (at Id,Vgs): 2.7 mOhm @ 22.5A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Mounting: LFPAK package
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7970 $52.7820
14+ $7.2181 $101.0534
22+ $6.9925 $153.8350
30+ $6.7670 $203.0100
39+ $6.5414 $255.1146
52+ $5.8647 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,680 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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