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RJK60S7DPK-M0#T0

Part No RJK60S7DPK-M0#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO-3PSG / Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3PSG Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2300pF @ 25V
Vgs (Maximum) +30V, -20V
FET Feature Super Junction
Power Dissipation (Maximum) 227.2W (Tc)
Rds On (Maximum) @ Id, Vgs 125 mOhm @ 15A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3PSG
Package TO-3PSG
Win Source Part Number 793233-RJK60S7DPK-M0#T0
Popularity Medium
Supply and Demand Status Limited
Family Name RJK60S7DPK-M0
Introduction Date April 23, 2012
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian RJK60S7DPK-M0#T0 CAD Model

Description

The RJK60S7DPK-M0#T0 from Renesas Electronics America MOSFET is a super junction technology device that has a drain-source voltage of 600V.

  • Continuous Drain Current: 30A (Tc)
  • Package: TO-3PSG
  • Mounting Style: through-hole
  • Drive Voltage: 10V
  • Gate Charge: 39nC @ 10V
  • Input Capacitance: 2300pF @ 25V
  • Power Dissipation: 227.2W (Tc)
  • Rds On: 125 mOhm @ 15A, 10V
  • Family: RJK60S7DPK-M0
  • Application: discrete semiconductor products
  • EOL Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $103.5088 $103.5088
2+ $100.2748 $200.5496
3+ $97.0396 $291.1188
4+ $93.8045 $375.2180
5+ $84.1013 $420.5065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
Order Increment : 1 pcs
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