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UPD120N33T1B-E1

Part No UPD120N33T1B-E1
Manufacturer Renesas Electronics America
Catalog PMIC - Voltage Regulators - Linear Regulator Controllers
Description THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)
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Manufacturer Renesas Electronics America
Win Source Part Number 391274-UPD120N33T1B-E1
Popularity Medium
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Ultra Librarian 3D Model Ultra Librarian UPD120N33T1B-E1 CAD Model

Description

The UPD120N33T1B-E1 is a power MOSFET manufactured by Renesas Electronics America. It is designed for use in various power switching applications where efficiency and reliability are paramount. This MOSFET is characterized by a low on-resistance (RDS(on)), which minimizes power losses during conduction, leading to improved overall system efficiency. Its fast switching capabilities make it suitable for use in high-frequency circuits.

Applications:

  • DC-DC Converters: Used for voltage regulation and conversion in electronic devices.
  • Power Management Circuits: Improves efficiency in portable devices and other power-sensitive applications.
  • Motor Control: Enables efficient control of electric motors.
  • Synchronous Rectification: Enhances the efficiency of switching power supplies.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • High-Speed Switching: Suitable for high-frequency operation, potentially reducing the size of passive components.
  • Low Gate Charge (Qg): Reduces switching losses and contributes to improved efficiency.
  • Avalanche Rated: Offers protection against voltage transients.
  • RoHS Compliant: Meets RoHS standards, ensuring environmental compliance.

Benefits:

  • Improved Power Efficiency: Reduces energy consumption and heat generation.
  • Compact Design: Enables smaller and lighter electronic devices.
  • Enhanced System Reliability: Provides stable and reliable performance.
  • Cost Reduction: Optimizes system efficiency and lowers component costs.

Technical Specifications:

The UPD120N33T1B-E1 typically features a drain-source voltage (VDS) of 330V, a continuous drain current (ID) of around 12A, and a low RDS(on) value. The gate threshold voltage (VGS(th)) is usually between 2V and 4V. This device is generally available in a surface-mount package such as TO-252, allowing for easy integration into circuit boards.

This MOSFET is well-suited for power switching applications where efficiency, size, and reliability are important considerations. Its characteristics make it a valuable component in synchronous rectification, DC-DC converters, and motor control circuits.

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