The 2SB1344 is a PNP silicon epitaxial transistor manufactured by Rohm Semiconductor. It is designed for use in medium power amplifier and switching applications. This transistor features a high collector current and low saturation voltage, making it suitable for various applications in consumer and industrial electronics.

Applications

• Medium power amplifiers
• Switching circuits
• Motor control circuits
• DC-DC converters
• Audio output stages

Features

• PNP Silicon Epitaxial Transistor
• High collector current
• Low saturation voltage
• High hFE (DC current gain)
• Compact TO-126 package

Benefits

• Efficient power amplification and switching
• Low power dissipation
• Good linearity
• Simple to integrate into circuits
• Cost-effective solution

Technical Specifications

The 2SB1344 has a collector-emitter voltage (VCEO) of -60V, a collector current (IC) of -3A, and a power dissipation (PC) of 10W. The DC current gain (hFE) ranges from 80 to 240. The saturation voltage (VCE(sat)) is typically -0.5V at IC = -1A. The transition frequency (fT) is 80 MHz. The operating junction temperature range is -55°C to +150°C. The transistor is available in a TO-126 package.

The Rohm 2SB1344 is a reliable and versatile PNP transistor designed for medium power applications. Its high collector current and low saturation voltage make it a suitable choice for efficient power amplification and switching circuits in a variety of electronic devices.