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Same model may have multiple batches, images only for reference.
R6012ANX Real Image
Same model may have multiple batches, images only for reference.

R6012ANX

Part No R6012ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091362-R6012ANX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6012ANX CAD Model

Description

The Rohm Semiconductor 1091362-R6012ANX is a discrete semiconductor product that is suitable for various electronic devices and systems.

  • Polarity: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 12A @ 25°C
  • Maximum Rds On: 420 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 1mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1435 $62.8925
125+ $0.9379 $117.2375
195+ $0.9090 $177.2550
265+ $0.8790 $232.9350
340+ $0.8501 $289.0340
455+ $0.7623 $346.8465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 495 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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