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Same model may have multiple batches, images only for reference.
R6012FNX Real Image
Same model may have multiple batches, images only for reference.

R6012FNX

Part No R6012FNX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO-220FM
Datasheet
R6012FNX Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 510 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091363-R6012FNX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6012FNX CAD Model

Description

The R6012FNX is an N-channel MOSFET transistor from Rohm Semiconductor that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current Rating: 12A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 35nC @ 10V
  • Mounting Technology: Through Hole
  • Package: TO-220FM
  • Maximum Power Dissipation: 50W (Tc)
  • Operating Temperature Range: 150°C (TJ)
  • Maximum Rds On at Id,Vgs: 510 mOhm @ 6A, 10V
  • Popularity: Medium

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