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Same model may have multiple batches, images only for reference.
R6020ENX Real Image
Same model may have multiple batches, images only for reference.

R6020ENX

Part No R6020ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO220
Datasheet
R6020ENX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 196 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091368-R6020ENX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6020ENX CAD Model

Description

The R6020ENX is an N-Channel MOSFET from Rohm Semiconductor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 20A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 196 mOhm @ 10A, 10V
  • Drive Voltage: 10V
  • Power Dissipation: 50W (Tc)
  • Mounting: Through Hole
  • Case/Package: TO-220FM
  • Dimension: TO-220-2 Full Pack
  • Temperature Range: -50°C to 70°C

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Quantity Unit Price Ext. Price
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36+ $2.8046 $100.9656
56+ $2.7169 $152.1464
77+ $2.6293 $202.4561
99+ $2.5417 $251.6283
132+ $2.2787 $300.7884
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