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R6042JNZ4C13

Part No R6042JNZ4C13
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 42A TO247G / N-Channel 600 V 42A (Tc) 495W (Tc) Through Hole TO-247G
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 104mOhm @ 21A, 15V
Vgs(th) (Max) @ Id 7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 100 V
Power Dissipation (Max) 495W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247G
Case / Package TO-247-3
Base Product Number R6042
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324347-R6042JNZ4C13
Ultra Librarian 3D Model Ultra Librarian R6042JNZ4C13 CAD Model

Description

The Rohm Semiconductor 1324347-R6042JNZ4C13 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 600V and a continuous drain current (Id) of 42A (Tc) @ 25°C.

  • Maximum Rds On: 104mOhm @ 21A and 15V
  • Maximum Vgs(th): 7V @ 5.5mA
  • Power Dissipation (Max): 495W (Tc)
  • Gate Charge (Qg) (Max): 100 nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100V
  • Package: TO-247G package
  • Temperature Range: -55°C to 150°C (TJ)
  • Win Source Part Number: 1324347-R6042JNZ4C13

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