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Same model may have multiple batches, images only for reference.
R8002ANX Real Image
Same model may have multiple batches, images only for reference.

R8002ANX

Part No R8002ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A TO220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Package Bulk
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
Base Product Number R8002
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659088-R8002ANX
Ultra Librarian 3D Model Ultra Librarian R8002ANX CAD Model

Description

The R8002ANX is an N-channel MOSFET transistor from Rohm Semiconductor.

  • Channel Type: N-channel
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage: 800 V
  • Continuous Drain Current (@ 25°C): 2A
  • On-Resistance (Maximum) @ Id, Vgs: 4.3 Ohm @ 1A, 10V
  • Gate Threshold Voltage @ Id: 5V @ 1mA
  • Maximum Power Dissipation: 35W
  • Gate Charge @ Vgs: 12.7 nC @ 10V
  • Input Capacitance @ Vds: 210 pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Applications: Power supplies, motor control, and inverters

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