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Same model may have multiple batches, images only for reference.
RDD022N60TL Real Image
Same model may have multiple batches, images only for reference.

RDD022N60TL

Part No RDD022N60TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V CPT
Datasheet
RDD022N60TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.7V @ 1mA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 175pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 6.7 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1091677-RDD022N60TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDD022N60TL CAD Model

Description

The Rohm Semiconductor RDD022N60TL is an N-channel MOSFET transistor that has a drain-source breakdown voltage of 600V and a continuous drain current of 2A (Tc).

  • Power Dissipation: 20W (Tc)
  • Gate-Source Threshold Voltage: 4.7V @ 1mA
  • Maximum Rds On at Id, Vgs: 6.7 Ohm @ 1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: 150°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9420 $61.2300
150+ $0.7731 $115.9650
235+ $0.7488 $175.9680
320+ $0.7246 $231.8720
415+ $0.7005 $290.7075
555+ $0.6281 $348.5955
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