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Same model may have multiple batches, images only for reference.
RHU002N06T106 Real Image
Same model may have multiple batches, images only for reference.

RHU002N06T106

Part No RHU002N06T106
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 200MA SOT-323
Datasheet
RHU002N06T106 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 4.4nC @ 10V
Max Input Capacitance 15pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 200mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT3
Dimension SC-70, SOT-323
Win Source Part Number 027416-RHU002N06T106
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RHU002N06T106 CAD Model

Description

The Rohm Semiconductor RHU002N06T106 is an N-channel MOSFET that is designed to be used in various electronic devices.

  • Power Dissipation: 200mW (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,120+ $0.0448 $50.1760
2,720+ $0.0368 $100.0960
4,215+ $0.0356 $150.0540
5,800+ $0.0345 $200.1000
7,510+ $0.0333 $250.0830
10,035+ $0.0299 $300.0465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 1120 pcs
Order Increment : 1 pcs
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