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Same model may have multiple batches, images only for reference.
RQ5H020SPTL Real Image
Same model may have multiple batches, images only for reference.

RQ5H020SPTL

Part No RQ5H020SPTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 45V 2A TSMT
Datasheet
RQ5H020SPTL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 500pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 190 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT3
Dimension SC-96
Win Source Part Number 1092631-RQ5H020SPTL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ5H020SPTL CAD Model

Description

The Rohm Semiconductor RQ5H020SPTL is a P-channel MOSFET with a drain-source breakdown voltage of 45V and a continuous drain current of 2A @ 25°C.

  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current: 2A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 9.5nC @ 10V
  • Maximum Input Capacitance: 500pF @ 10V
  • Package: TSMT3
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
465+ $0.1077 $50.0805
1,135+ $0.0884 $100.3340
1,755+ $0.0856 $150.2280
2,415+ $0.0829 $200.2035
3,125+ $0.0801 $250.3125
4,180+ $0.0718 $300.1240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,000 pieces
MOQ: 465 pcs
Order Increment : 1 pcs
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