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Same model may have multiple batches, images only for reference.
RS1G120MNTB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RS1G120MNTB

Part No RS1G120MNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 12A 8HSOP
Datasheet
RS1G120MNTB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.4nC @ 10V
Max Input Capacitance 570pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 16.2 mOhm @ 12A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Dimension 8-PowerTDFN
Win Source Part Number 1092696-RS1G120MNTB
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian RS1G120MNTB CAD Model

Description

The Rohm Semiconductor 1092696-RS1G120MNTB is a MOSFET transistor with N-channel polarity.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 12A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 9.4nC @ 10V
  • Maximum Input Capacitance: 570pF @ 20V
  • Maximum Rds On @ Id, Vgs: 16.2 mOhm @ 12A, 10V
  • Temperature Range: 150°C
  • Drive Voltage: 4.5V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8181 $53.1765
150+ $0.6713 $100.6950
235+ $0.6503 $152.8205
320+ $0.6294 $201.4080
415+ $0.6084 $252.4860
555+ $0.5454 $302.6970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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MOQ: 65 pcs
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