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Same model may have multiple batches, images only for reference.
RS1G150MNTB Real Image
Same model may have multiple batches, images only for reference.

RS1G150MNTB

Part No RS1G150MNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 15A 8HSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 930pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Dimension 8-PowerTDFN
Win Source Part Number 1092698-RS1G150MNTB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RS1G150MNTB CAD Model

Description

The Rohm Semiconductor MOSFET is a high-performance N-channel polarity device designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3W (Ta) and 25W (Tc)
  • Mounting Package: 8-HSOP
  • Package Dimension: 8-PowerTDFN
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 15A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 930pF @ 20V
  • Maximum Rds On: 10.6 mOhm @ 15A, 10V
  • Device Status: Active
  • Popularity Rating: Medium

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